Oxide sintered body, method for producing the same and sputtering target 机翻标题: 暂无翻译,请尝试点击翻译按钮。

源语言标题
(JP2016210679) 酸化​物​焼​結​体、その​製造​方法​及び​スパッタリング​ターゲット
公开号/公开日
JP2016210679 A 2016-12-15 [JP2016210679] / 2016-12-15
申请号/申请日
2016JP-0094366 / 2016-05-10
发明人
TOMAI SHIGEKAZU;INOUE KAZUYOSHI;EBATA KAZUAKI;SHIBATA MASATOSHI;UTSUNO FUTOSHI;TSURUMA YUKI;ISHIHARA YU;
申请人
IDEMITSU KOSAN;
主分类号
IPC分类号
C04B-035/00C23C-014/08C23C-014/34H01L-021/336H01L-021/363H01L-029/786
摘要
(JP2016210679) PROBLEM TO BE SOLVED: To provide an oxide sintered body as a raw material for obtaining a thin film transistor by a vacuum film deposition process such as a sputtering method, and to provided a method for producing the oxide sintered body, and a sputtering target having high conductivity and excellent in electric discharge stability, and the thin film transistor.SOLUTION: The sputtering target is provided that is produced by working an oxide sintered body including a bixbyite phase composed of InOand an ABOphase, where A is one or more element selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu and B is one or more element selected from Al or Ga.  There is provided a method for obtaining a TFT (Thin Film Transistor) by film-forming an oxide semiconductor layer on a silicon substrate with a thermal oxide film by sputtering.  There is also provided a method for producing an oxide sintered body by mixing a raw material powder containing the iridium and a raw material powder constituting the ABOphase to form a mixed powder and firing the mixed powder at 1200 to 1650°C for 10 hours or more.SELECTED DRAWING: None
机翻摘要
暂无翻译结果,您可以尝试点击头部的翻译按钮。
地址
代理人
代理机构
;
优先权号
2013JP-0272384 2013-12-27
主权利要求

        
法律状态
(JP2016210679) LEGAL DETAILS FOR JP2016210679  Actual or expected expiration date=2034-12-18    Legal state=ALIVE    Status=PENDING     Event publication date=2016-05-10  Event code=JP/APP  Event indicator=Pos  Event type=Examination events  Application details  Application country=JP JP2016094366  Application date=2016-05-10  Standardized application number=2016JP-0094366     Event publication date=2016-12-15  Event code=JP/A  Event indicator=Pos  Event type=Examination events  Published application  Publication country=JP  Publication number=JP2016210679  Publication stage Code=A  Publication date=2016-12-15  Standardized publication number=JP2016210679     Event publication date=2017-06-09  Event code=JP/A621  Event indicator=Pos  Event type=Examination events  Written request for application examination  Effective date of the event=2017-06-09  JAPANESE INTERMEDIATE CODE: A621     Event publication date=2017-07-03  Event code=JP/A521  Event type=Restitution or restoration  Written amendment  Effective date of the event=2017-07-03  JAPANESE INTERMEDIATE CODE: A523
专利类型码
A
国别省市代码
若您需要申请原文,请登录。

最新评论

暂无评论。

登录后可以发表评论

意见反馈
返回顶部