(JP2017092453) A gate electrode, the source electrode, drain electrode, the organic semiconductor layer and the gate insulation layer comprising a thin film organic transistor, the organic semiconductor layer, the formula (1) 'formulae, R R R and R is, each independently, a substituent of 1-20 carbon atoms which may have an alkyl group, which may have a substituent and an alkoxy group of 1-20 carbon atoms, which may have a substituent group having a carbon number of 1-20 alkylthio group, which may have a substituent group having a carbon number of 2-20 alkylcarbonyl group, which may have a substituent group having a carbon number of 2-20 alkoxycarbonyl group, a substituent of 2-20 carbon atoms which may have a dialkylamino group, an alkyl group of 1-20 carbon atoms substituted with an aryl group, an alkoxy group of 1-20 carbon atoms substituted with an aryl group, an alkyl group of 1-20 carbon atoms substituted with a monovalent heterocyclic ring group 1, the number of carbon atoms or an alkynyl group having a carbon number of 2-22 of a 2-22 alkenyl group. These groups may have substituents, selected from the following group 1. Group 1: a fluorine atom, an alkyl group having 1-20 carbon atoms, an alkoxy group of 1-20 carbon atoms, an alkylthio group of 1-20 carbon atoms, a dialkylamino group having a carbon number of 2-20, an aryl group having 6-20 carbon atoms, a divalent heterocyclic group having a carbon number of 2-20 1, an alkenyl group having 2-20 carbon atoms, and an alkynyl group of 2-20 carbon atoms substituted silyl group of 3-20 carbon atoms. A is a ring, a thiophene ring, a benzothiophene ring or thienothiophene ring a, ring 2 may be the same as A two may be different. B is a ring, may have a substituent an aromatic ring, may have a substituent or an aromatic heterocycle and an aromatic ring selected from the group consisting of the heteroaromatic ring is condensed with one 2-4 may have a substituent or an aromatic ring may have a substituent to an aromatic heterocycle. These groups may have substituents, selected from the following group 2. Group 2: and a fluorine atom, an alkyl group of 1-20 carbon atoms, an alkoxy group of 1-20 carbon atoms, an alkylthio group of 1-20 carbon atoms, a dialkylamino group of 2-20 carbon atoms, an aryl group of 6-20 carbon atoms, a divalent heterocyclic group having a carbon number of 1 of the 2-20, the number of carbon atoms and an alkenyl group having 2-20 carbon atoms of 2-20 alkynyl group. ' A polymer containing the structural unit represented by a semiconductor compound, wherein the gate insulating layer, the formula (2) '(A) in the formula, R is, a hydrogen atom or a methyl group, R is, a hydrogen atom, an alkyl group of 1-20 carbon atoms or a group having a carbon number of 6-20 represents an aryl group. Is Rf, a fluorine atom, a fluorine atom as a substituent an alkyl group having 1-20 carbon atoms or a fluorine atom as a substituent of the aryl group having 6-20 carbon atoms. Is m, an integer of 1-5. R Rf and when there is a plurality, they may be the same or different and may be used. ' Includes the structural unit represented by, a block agent and block isocyanate groups blocked with a blocking agent and an isothiocyanate group selected from the group consisting of a structural unit having one or more groups of the polymeric compound 2, active hydrogen group in the molecule (B) one or more low molecular weight compound containing 2 to 2 active hydrogen groups in the molecule and one or more polymeric compounds selected from the group consisting of 1 and one or more compounds having a curable resin composition comprising the organic thin film transistor.
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