Lead-Free Perovskite Derivative Cs_2SnCl_(6?x)Br_x Single Crystals for Narrowband Photodetectors 机翻标题: 暂无翻译,请尝试点击翻译按钮。

来源
Advanced Optical Materials
年/卷/期
2019 / 7 / 10
页码
1900139.1-1900139.7
作者单位
HUST, Sargent Joint Res Ctr, WNLO, Wuhan 430074, Hubei, Peoples R China|HUST, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China;Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Shenzhen 518060, Peoples R China|Shenzhen Univ, Coll Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R Chin;Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China;Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia|Siberian Fed Univ, Dept Engn Phys & Radioelect, Krasnoyarsk 660041, Russia|Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia;Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Shenzhen 518060, Peoples R China|Shenzhen Univ, Coll Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R Chin;Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China;Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China;Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Shenzhen 518060, Peoples R China;HUST, Sargent Joint Res Ctr, WNLO, Wuhan 430074, Hubei, Peoples R China|HUST, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China|South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China|South China ;
作者
Luo, Jiajun;Zhou, Jun;Rong, Ximing;Wei, Peijia;Molokeev, Maxim S.;Huang, Yang;Zhao, Jing;Liu, Quanlin;Zhang, Xiuwen;Tang, Jiang;Xia, Zhiguo;
摘要
Lead-free and stable Sn halide perovskites demonstrate tremendous potential in the field of optoelectronic devices. Here, the structure and optical properties of the defect perovskites Cs2SnCl6-xBrx are reported, as well as their use as photodetector materials. Millimeter-sized Cs2SnCl6-xBrx single crystals are grown by the hydrothermal method, with the body color continuously changing from transparent to yellow and finally to dark red. Narrowband single-crystal photodetectors using Cs2SnCl6-xBrx crystals are presented, which show a high detectivity of approximate to 2.71 x 10(10) Jones, with narrowband photodetection (full-width at half-maximum approximate to 45 nm) and high ion diffusion barriers. Moreover, the response spectra are continuously tuned from near violet to orange depending on the variation of the bandgap of the single crystals by changing the halide compositions. The strong surface charge recombination of the excess carriers near the crystal surfaces produced by short wavelength light elucidates the narrowband photodetection behavior. This work provides a new paradigm in the design of lead-free, stable, and high-performance perovskite derivatives for optoelectronics applications.
机翻摘要
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关键词/主题词
band structure;Cs2SnBr6;Cs2SnCl6;lead-free perovskite derivatives;narrowband photodetection;
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