源语言标题

(KR20160105762) 포지티브형 레지스트 재료 및 패턴 형성 방법

公开号/公开日

KR20160105762 A 2016-09-07 [KR20160105762] / 2016-09-07

申请号/申请日

2016KR-0111979 / 2016-08-31

发明人

TAKEMURA KATSUYA;MASUNAGA KEIICHI;DOMON DAISUKE;SAGEHASHI MASAYOSHI;

申请人

SHINETSU CHEMICAL;

主分类号

IPC分类号

C08F-020/30C08F-212/14C08F-220/30C08F-232/00G03F-007/004G03F-007/039G03F-007/38H01L-021/027

摘要

(KR20160105762) Provided in the present invention is a positive resist material, comprising a polymer compound having a repeating unit represented by chemical formula 1 or 2.  The material of the present invention has significantly high resolution, and is significantly useful for an accurate fine processing, in a fine processing technology, particularly an ArF lithography technology.

机翻摘要

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地址

代理人

代理机构

;

优先权号

2008JP-0297828 2008-11-21

主权利要求

法律状态

(KR20160105762) LEGAL DETAILS FOR KR20160105762  Actual or expected expiration date=2017-02-20    Legal state=DEAD    Status=REVOKED     Event publication date=2016-08-31  Event code=KR/APP  Event indicator=Pos  Event type=Examination events  Application details  Application country=KR KR20160111979  Application date=2016-08-31  Standardized application number=2016KR-0111979     Event publication date=2016-08-31  Event code=KR/A107  Event type=Examination events  Divisional application of patent    Event publication date=2016-09-07  Event code=KR/A  Event type=Examination events  Published application  Publication country=KR  Publication number=KR20160105762  Publication stage Code=A  Publication date=2016-09-07  Standardized publication number=KR20160105762     Event publication date=2016-12-14  Event code=KR/E902  Event indicator=Neg  Event type=Examination events  Notification of reason for refusal    Event publication date=2017-02-20  Event code=KR/E601  Event indicator=Neg  Event type=Event indicating Not In Force  Decision to refuse application

专利类型码

A

国别省市代码

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