Positive resist composition and patterning process 机翻标题: 暂无翻译,请尝试点击翻译按钮。

源语言标题
(KR20160105762) 포지티브형 레지스트 재료 및 패턴 형성 방법
公开号/公开日
KR20160105762 A 2016-09-07 [KR20160105762] / 2016-09-07
申请号/申请日
2016KR-0111979 / 2016-08-31
发明人
TAKEMURA KATSUYA;MASUNAGA KEIICHI;DOMON DAISUKE;SAGEHASHI MASAYOSHI;
申请人
SHINETSU CHEMICAL;
主分类号
IPC分类号
C08F-020/30C08F-212/14C08F-220/30C08F-232/00G03F-007/004G03F-007/039G03F-007/38H01L-021/027
摘要
(KR20160105762) Provided in the present invention is a positive resist material, comprising a polymer compound having a repeating unit represented by chemical formula 1 or 2.  The material of the present invention has significantly high resolution, and is significantly useful for an accurate fine processing, in a fine processing technology, particularly an ArF lithography technology.
机翻摘要
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地址
代理人
代理机构
;
优先权号
2008JP-0297828 2008-11-21
主权利要求

        
法律状态
(KR20160105762) LEGAL DETAILS FOR KR20160105762  Actual or expected expiration date=2017-02-20    Legal state=DEAD    Status=REVOKED     Event publication date=2016-08-31  Event code=KR/APP  Event indicator=Pos  Event type=Examination events  Application details  Application country=KR KR20160111979  Application date=2016-08-31  Standardized application number=2016KR-0111979     Event publication date=2016-08-31  Event code=KR/A107  Event type=Examination events  Divisional application of patent    Event publication date=2016-09-07  Event code=KR/A  Event type=Examination events  Published application  Publication country=KR  Publication number=KR20160105762  Publication stage Code=A  Publication date=2016-09-07  Standardized publication number=KR20160105762     Event publication date=2016-12-14  Event code=KR/E902  Event indicator=Neg  Event type=Examination events  Notification of reason for refusal    Event publication date=2017-02-20  Event code=KR/E601  Event indicator=Neg  Event type=Event indicating Not In Force  Decision to refuse application
专利类型码
A
国别省市代码
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