Preparation Method of Graphene Thin Film Layer without Transferring 机翻标题: 暂无翻译,请尝试点击翻译按钮。

源语言标题
(KR20170035323) 무전사식 그래핀층의 형성 방법
公开号/公开日
KR20170035323 A 2017-03-30 [KR20170035323] / 2017-03-30
申请号/申请日
2016KR-0105001 / 2016-08-18
发明人
YOON Soon-Gil;PARK Byeong-Ju;
申请人
CHUNGNAM NATIONAL UNIVERSITY INDUSTRY ACADEMIC FOUNDATION;
主分类号
IPC分类号
H01G-011/32H01L-031/0224H01L-049/02
摘要
(KR20170035323) The present invention relates to a preparation method of a graphene thin film layer and an electric element having a graphene thin film layer formed thereby, which can easily form a high quality graphene thin film layer having excellent crystallizability without transferring in a large area at a low temperature.  Therefore, the graphene thin film layer can be directly applied to a base substrate used for a transparent electrode or a semiconductor element without an additional transferring process.  More specifically, the present invention relates to a preparation method of a graphene thin film layer without transferring, which comprises the following steps of: depositing a Ti layer having a thickness of 3-20 nm by sputtering on a substrate; and growing graphene by a chemical vapor deposition on the deposited Ti layer.  COPYRIGHT KIPO 2017
机翻摘要
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地址
代理人
代理机构
;
优先权号
2015KR-0134006 2015-09-22
主权利要求

        
法律状态
(KR20170035323) LEGAL DETAILS FOR KR20170035323  Actual or expected expiration date=2036-08-18    Legal state=ALIVE    Status=PENDING     Event publication date=2016-08-18  Event code=KR/APP  Event indicator=Pos  Event type=Examination events  Application details  Application country=KR KR20160105001  Application date=2016-08-18  Standardized application number=2016KR-0105001     Event publication date=2016-08-18  Event code=KR/A201  Event type=Examination events  Request for examination    Event publication date=2017-03-30  Event code=KR/A  Event type=Examination events  Published application  Publication country=KR  Publication number=KR20170035323  Publication stage Code=A  Publication date=2017-03-30  Standardized publication number=KR20170035323
专利类型码
A
国别省市代码
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