Substrate processing method and substrate processing apparatus 机翻标题: 暂无翻译,请尝试点击翻译按钮。

公开号/公开日
US2016086797 A1 2016-03-24 [US20160086797]US9754780 B2 2017-09-05 [US9754780] / 2016-03-242017-09-05
申请号/申请日
2015US-14956018 / 2015-12-01
发明人
UEDA TATSUSHI;TERASAKI TADASHI;OGAWA UNRYU;HIRANO AKITO;
申请人
HITACHI KOKUSAI ELECTRIC;
主分类号
IPC分类号
C23C-016/50C23F-001/00C23F-001/08H01L-021/02H01L-021/28H01L-021/31
摘要
(US9754780) A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.
机翻摘要
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地址
代理人
代理机构
;
优先权号
2005JP-0075917 2005-03-16 2005JP-0216666 2005-07-27 2006WO-JP304960 2006-03-14 2008US-11886529 2008-01-11 2009US-12320767 2009-02-04 2012US-13672282 2012-11-08 2015US-14956018 2015-12-01
主权利要求
(US9754780) 1. A manufacturing method of a semiconductor device comprising: (a) generating hydrogen radicals by plasma excitation of hydrogen gas without oxygen gas and without an oxygen-containing gas and exposing a surface of a substrate on which a sili
法律状态
(US9754780) LEGAL DETAILS FOR US2016086797  Actual or expected expiration date=2026-03-14    Legal state=ALIVE    Status=GRANTED     Event publication date=2015-12-01  Event code=US/APP  Event indicator=Pos  Event type=Examination events  Application details  Application country=US US14956018  Application date=2015-12-01  Standardized application number=2015US-14956018     Event publication date=2015-12-01  Event code=US/EXMR  Event type=Administrative notifications  USPTO Examiner Name Primary Examiner: VINH, LAN    Event publication date=2015-12-01  Event code=US/ART  Event type=Administrative notifications  USPTO Art Group  ART=1713     Event publication date=2015-12-01  Event code=US/DK  Event type=Examination events  Attorney Docket Number Docket Nbr: 133919.03 Customer Nbr: 25944    Event publication date=2015-12-01  Event code=US/ENT  Event type=Administrative notifications  Business Entity Status: UNDISCOUNTED    Event publication date=2015-12-01  Event code=US/AIA  Event type=Administrative notifications  First Inventor File Indicated:  AIA=No     Event publication date=2015-12-01  Event code=US/PTARDY  Event indicator=Pos  Event type=Examination events  Patent Term Adjustment - Ready for Examination    Event publication date=2015-12-01  Event code=US/ENTYSTA  Event type=Administrative notifications  Entity Status Set to Undiscounted    Event publication date=2015-12-14  Event code=US/APPFILEREC  Event type=Administrative notifications  Event type=OAO  Filing Receipt    Event publication date=2016-02-29  Event code=US/IDS  Event type=Examination events  Event type=OAI  Information Disclosure Statement Filed    Event publication date=2016-03-21  Event code=US/DOCK  Event indicator=Pos  Event type=Examination events  Case Docketed to Examiner in GAU    Event publication date=2016-03-24  Event code=US/A1  Event type=Examination events  Application published  Publication country=US  Publication number=US2016086797  Publication stage Code=A1  Publication date=2016-03-24  Standardized publication number=US20160086797     Event publication date=2016-03-24  Event code=US/PGPUBN  Event indicator=Pos  Event type=Examination events  Event type=OAO  PG-Pub Issue Notification    Event publication date=2016-07-07  Event code=US/DOCK  Event indicator=Pos  Event type=Examination events  Case Docketed to Examiner in GAU    Event publication date=2016-07-15  Event code=US/CTNF  Event type=Examination events  Event type=OA  Event type=OAO  Non-Final Rejection    Event publication date=2016-12-22  Event code=US/DC  Event type=Examination events  Terminal Disclaimer Filed    Event publication date=2017-05-03  Event code=US/NOAM  Event indicator=Pos  Event type=Examination events  Event type=OAO  Mail Notice of Allowance    Event publication date=2017-05-17  Event code=US/RECEIPTCOR  Event type=Administrative notifications  Event type=OAO  Filing Receipt - Corrected    Event publication date=2017-08-04  Event code=US/APRDY  Event indicator=Pos  Event type=Examination events  Application Is Considered Ready for Issue    Event publication date=2017-08-16  Event code=US/ISSM  Event indicator=Pos  Event type=Examination events  Event type=OAO  Issue Notification Mailed    Event publication date=2017-09-05  Event code=US/B2  Event indicator=Pos  Event type=Event indicating In Force  Granted patent as second publication  Publication country=US  Publication number=US9754780  Publication stage Code=B2  Publication date=2017-09-05  Standardized publication number=US9754780
专利类型码
A1B2
国别省市代码
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